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semiconductor band - tradução para russo
Narrow gap semiconductors; Narrow gap semiconductor; Narrow band gap semiconductor
semiconductor band
радиотехника
зона
semiconductor device
![Operation of a [[MOSFET]] and its Id-Vg curve. At first, when no gate voltage is applied. There is no inversion electron in the channel, the device is OFF. As gate voltage increase, the inversion electron density in the channel increase, the current increases, and the device turns on.](https://commons.wikimedia.org/wiki/Special:FilePath/Threshold formation nowatermark.gif?width=200 "Operation of a [[MOSFET]] and its Id-Vg curve. At first, when no gate voltage is applied. There is no inversion electron in the channel, the device is OFF. As gate voltage increase, the inversion electron density in the channel increase, the current increases, and the device turns on.")
ELECTRONIC COMPONENT THAT EXPLOITS THE ELECTRONIC PROPERTIES OF SEMICONDUCTOR MATERIALS
Semiconductor devices; Semiconductor device physics; Semiconductor Devices; Semiconductor electronics; Semiconductor component; History of semiconductor device development
общая лексика
полупроводниковое устройство
электронное устройство, основные характеристики которого обусловлены прохождением тока через полупроводник
полупроводниковый прибор
Смотрите также
semi-conducting
![[[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] developed the bipolar [[point-contact transistor]] in 1947.](https://commons.wikimedia.org/wiki/Special:FilePath/Bardeen Shockley Brattain 1948.JPG?width=200 "[[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] developed the bipolar [[point-contact transistor]] in 1947.")
![[[Karl Ferdinand Braun]] developed the [[crystal detector]], the first [[semiconductor device]], in 1874.](https://commons.wikimedia.org/wiki/Special:FilePath/Ferdinand Braun.jpg?width=200 "[[Karl Ferdinand Braun]] developed the [[crystal detector]], the first [[semiconductor device]], in 1874.")
![ingot]] of [[monocrystalline silicon]]](https://commons.wikimedia.org/wiki/Special:FilePath/Monokristalines Silizium für die Waferherstellung.jpg?width=200 "ingot]] of [[monocrystalline silicon]]")
![[[Silicon]] crystals are the most common semiconducting materials used in [[microelectronics]] and [[photovoltaics]].](https://commons.wikimedia.org/wiki/Special:FilePath/Silicon.jpg?width=200 "[[Silicon]] crystals are the most common semiconducting materials used in [[microelectronics]] and [[photovoltaics]].")
MATERIAL THAT HAS ELECTRICAL CONDUCTIVITY INTERMEDIATE TO THAT OF A CONDUCTOR AND AN INSULATOR
Semiconductors; Semi-Conductors; Semi-conductor; Semiconductor physics; Semiconducting material; List of semiconductor devices; Semiconductor material; Semiconducting; Semi conductor; Semiconductive; Electronic Materials; Semiconduction; Semicon; Electronic materials; Semi-conducting; Semiconductivity; Semi conductors; Physics of semiconductors; Electronic substance
общая лексика
полупроводниковый
Definição
Барто
Агния Львовна [р. 4(17).2.1906, Москва], русская советская поэтесса. Начала печататься в 1925. Пишет для детей - о жизни советской школы, семьи, пионерах. Автор сборников стихов: "Братишки" (1928), "Мальчик наоборот" (1934), "Игрушки" (1936), "Снегирь" (1939), "Стихи детям" (1949; Государственная премия СССР, 1950), "Я расту" (1968) и др., сценариев кинофильмов "Подкидыш" (1939), "Слон и верёвочка" (1946), "Алеша Птицын вырабатывает характер" (1958) и др. Стихи Б., отмеченные мягким юмором, ясностью языка, завоевали большую популярность у юных читателей и у взрослых; они переведены на языки народов СССР и многие иностранные языки. В прозаических книгах для взрослых "Найти человека" (1969) автор рассказывает о своих поисках семей детей, потерявшихся во время Великой Отечественной войны. Награждена 3 орденами, а также медалями.
Соч.: Стихи детям, т. 1-2, М., 1966. Лит.: Дмитриева В., Агния Барто, М.-Л., 1953; Соловьев Б., Агния Барто, М., 1967.
Е. А. Таратута.
А. Л. Барто.
Wikipédia
Narrow-gap semiconductor
Narrow-gap semiconductors are semiconducting materials with a band gap that is comparatively small compared to that of silicon, i.e. smaller than 1.11 eV at room temperature. They are used as infrared detectors or thermoelectrics.
